Piezoelectric photothermal (PPT) spectroscopy, recently
developed from PAS (Photoacoustic Spectroscopy), has been used for investigating
physical properties of semiconductors. One of the advantages of this
experimental methodology is that it is a direct monitor of the nonradiative
recombination processes. Heat generated by the nonradiative recombinations
of photoexcited electrons are detected with high sensitivity. Therefore,
the PPT technique complements the well-known photoluminescence (PL)
technique, which can directly detect the radiative recombination processes.
The other advantage is that the PPT spectroscopy is sensitive to a very
small optical absorption coefficient in a highly transparent sample.
In the pem laboratory, we are investigating the physics of deep levels
in semiconductors by using the PPT technique for:
- Thin film quantum structure for optoelectronic
devices (GaInNAs,GaN, ...)
- Chalcopyrite semiconductors for solar cells (CuInSe2,
CuGaSe2,....)
- Low dimensional bulk semiconductors (layer compounds)
- LSI wafer substrate semiconductors (GaAs,Si)
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