Publications in 2000
Book
| T. Ikari and A. Fukuyama Nonradiative investigation of impurity and defect levels in Si and GaAs by piezoelectric photoacoustic spectroscopy in “Progress in Photothermal andPhotoacoustic Science and Technology Vol.4" SPIE Optical Engineering Press, ed. A. Mandelis and P. Hess, Chap 5, pp.147-176 (2000) |
Papers
1 |
K. Sakai, K. Yoshino, A. Fukuyama, H. Yokoyama, T. Ikari and
K. Maeda Crystallization of Amorphous GeSe2 Semiconductor by Isothermal Annealing without Light Radiation Jpn. J. Appl. Phys., 39, pp.1058-1061 (2000). |
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2 |
A. Fukuyama, Y. Akashi, M. Suemitsu and T. Ikari Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements J. Crystal Growth, 210, pp. 255-259 (2000 |
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3 |
S. Shigetomi and T. Ikari Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction J. Appl. Phys., 88, pp.1520-1524 (2000). |
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4 |
K. Ypshino, D. Maruoka, T. Ikari, P. J. Fons, S. Niki,and
A. Yamada Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy Appl. Phys. Letters, 77, 259-261 (2000) |
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5 |
S. Shigetomi, T. Ikari and H. Nakashima Electrical properties of p- and n-GaSe doped with As and Ge Jpn. J. Appl. Phys., 39, 5083-5084 (2000) |
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6 |
S. Shigetomi and T. Ikari Annealing behavior of Layered semiconductor p-InSe Doped with Hg Jpn. . Appl. Phys., 39, 1184-1185 (2000). |
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7 |
K. Yoshino, M. Yoneta, H. Sato, M. Onishi, L. H. Chan. T.
Abe, K. Ando and T. Ikari Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy J. Cryst. Growth, 214/215, 572-575 (2000). |
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8 |
K. Yoshino, H. Yokoyama, K. Maeda and T.Ikari Crystal Growth and photoluminescence of CuInGaSe alloys J. Crystal Growth, 211, 476-479 (2000). |
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9 |
S. Tanaka, T. Ikari and H. Kitagawa, Diffusion and Electrical Properties of Nickel in Silicon Defect and Diffuisn Forum, 183/185, 171-180 (2000). |
Proceedings Papers
1 |
T. Ikari, A. Fukuyama and Y. Akashi Investigation of deep-levels in semi-insulating GaAs by means of thermally activated piezoelectric photoacoustic measurements Proceedings of Symposium M in EMRS 2000 Sprong Cinference, Strasbourg, France, May 30-June 2, 2000, p.253. |
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2 |
A. Fukuyama, H. Nagatomo, Y. Akashi, and T. Ikari Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes Proceedings of Symposium M in EMRS 2000 Sprong Cinference, Strasbourg, France, May 30-June 2, 2000, p.2653. |
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