Publications in 2002
| 1 | S. Sato, A. Ito, S. Tada, S. Tanaka, A. Fukuyama and T. Ikari Investigation of Ni induced deep levels in n-type Si by a temperature dependent piezoelectric photothermal signals Jpn. J. Appl. Phys., 41, 3376-3378 (2002) |
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| 2 | S. Tada, S. Sato, A. Ito, A. Fukuyama and T. Ikari Investigation of EL6 deep levels in SI-GaAs by a temperature dependent piezoelectric photothermal signals Jpn. J. Appl. Phys., 41, 3358-3360 (2002) |
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| 3 | Y. Akaki, H. Komaki, K. Yoshino and T. Ikari Surface morphology of evaporated CuInS2 thin films grown by single source thermal evaporation technique J. Vacuum Sci. Tech. A20, pp.1486-1487 (2002) |
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| 4 | R. Ohno, Y. Taiji, S. Sato, A. Fukuyama, S. Shigetomi and
T. Ikari Effect of Zn atom diffusion in the active layer of InGaAlP visible LED investigated by the Piezoelectric Photothermal Spectroscopy Mat. Res. Soc. Symp. Proc., 692, 507-412 (2002) |
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| 5 | A. Fukuyama, H. Nagatomo, Y. Akashi and T. Ikari Annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs investigated by a piezoelectric photothermal spectroscopy Mat. Res. Soc. Symp. Proc., 692, 283-288 (2002) |
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| 6 | S. Shigetomi and T. Ikari Optical and Electrical Properties of the Layer Semiconductor n-InSe Doped with Sn Jpn. J. Appl. Phys., 41, 5565-5566 (2002). |
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| 7 | Kentaro Sakai, Atsuhiko Fukuyama, Taro Toyoda, and Tetsuo Ikari |
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| 8 | S. Tanaka, T. Ikari and H. Kitagawa Distribution of Substitutional Nickel Atoms in Dislocation Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analysis Based on the Dissociative Mechanism of Diffusion Jpn. J. Appl. Phys., 41, 6305-6309 (2002). |
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