Publications in 2003
Regular articles | ||
1 |
T. Ikari, K. Imai, A. Ito and M. Kondow Optical absorption spectra of thin GaInNAs single quantum wells investigated by means of piezoelectric photothermal spectroscopy Appl. Phys. Letters, 82, 3302-3303 (2003) |
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2 |
A. Fukuyama, T. Ikari, Y. Akashi and M. Suemitsu Indirect correlation during thermal recovery of EL2 in SI-GaAs: Proposal of a three center complex model. Phys. Rev., B15, 113202;1-4 (2003). |
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3 |
K. Sakai, K, Maeda, H. Yokoyama and T. Ikari Photo Induced Crystallization by Lasre Irradiation and Thermal Annealing in Amorphous GeSe2 J. Non-Cryst. Solids, 320, 223-230 (2003) |
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4 |
S.Shigetomi and T. Ikari Electrical and optical properties of n- and p-InSe doped with Sn and As J. Appl. Phys., 93, 2301-2303 (2003). |
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5 |
S. Sato, A. Memon, A. Fukuyama, S. Tanaka and T. Ikari, |
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6 |
A. Fukuyama, R. Ohno, Y. Akashi and T. Ikari Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique. Rev. Sci. Instruments, 74, 550-552(2003) |
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7 |
T. Ikari, J.P. Roger and D. Fournier Photothermal microscopy of silicon epitaxial layer on silicon substrate with depletion region at the interface Rev. Sci. Instruments, 74, 553-555(2003) |
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8 |
A. Memon, A. Fukuyama, S. Sato and T. Ikari |
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9 |
M. Tada, A. Fukuyama and T. Ikari Identification of hole traps in SI-GaAs by means of temperature dependent piezoelectric photothermal signal Jpn. J. Appl. Phys., 42, 3056-3059 (2003) |
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10 |
M. Malinski, A. Memon and T. Ikari |
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11 |
A. Memon, A. Fukuyama and T. Ikari Near band edge non-radiative recombination of Si single crystals investigated by piezoelectric photothermal spectroscopy Jpn. J. Appl. Phys., 42(2A), 358-362 (2003) |
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12 |
A. Memon, A. Fukuyama, S. Sato and T. Ikari, Surface states and band-to-band transition in slicon single crystal investigated by piezoelectric Photothermal Specrroscopy Materials Sci, Engin. B102, 12-15 (2003). |
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13 |
Y. Akaki, H. Komaki, H. Yokoyama, K. Yoshino, K. Maeda and T. Ikari |
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14 |
S. Shigetomi and T. Ikari Optical properties of GaSe grown by an excess and a lack of Ga atoms J. Appl. Physics., 94(8), 5399-5401 (2003). |
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15 |
K. Maeda, Y. Kai, T. Suginohara, H. Yokoyama, K. Sakai and
T. Ikari Effect of three stage isothermal annealing on the nucleation processes in GeSe2 glasses J. Materials Science: Materials in Electronics, 14, 838-840 (2003). |
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16 |
A. Ito, S. Sato, S. Tada, S. Tanaka, A. Fukuyama and T. Ikari |
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17 |
S. Shigetomi and T. Ikari Optical and Electrical Characterization of Layered Semiconductor p-InSe Doped with Sb Jpn. J. Appl. Phys., 42(11), 6951-6954 (2003). |
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18 |
M. Malinski and T. Ikari A modified approach to the analysisi of piezoelectric photothermal spectra Microelectronic Journal, 34, 1119-1128 (2003). |
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Interenationla Conference Proceedings | ||
1 |
T. Ikari, K. Imai, S. Fukushima and M. Kondow Investigation of electron non-radiative transition in GaInNAs/GaAs single quantum well structures by using a piezoelectric photothermal spectroscopy 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO) 2003, 17-18, November, University of Central Florida, Orlando, USA, Proceedings; IEEE 03TH8691, ISBN 0-7803-7904-7, pp.217-222 |
Oral |
2 |
Y. Akaki, N. Ohryouji, K. Yoshino, T. Ikari, S. Kawakita,
M. Imaizumi, S. Niki, K. Sakurai, S. Ishizuka, and T. Ohshima Proton Irradiation Damages in CuInSe2 Thin Film Solar Cell Materials investigated by a piezoelectric photothermal spectroscopy 2003 International Semiconductor Device Research Symposium, 10-12 December, 2003, Washington DC, USA, Proceedings; IEEE 03EX741, ISBN 0-7803-8139-4, pp. 460-461 |
Oral |
3 |
K. Sakai, A. Fukuyama and T. Ikari Impurity and Defect Centers of n-type 4H-SiC Single Crystals investigated by a photoluminescence and piezoelectric photothermal spectroscopy 2003 International Semiconductor Device Research Symposium, 10-12 December, 2003, Washington DC, USA, Proceedings; IEEE 03EX741, ISBN 0-7803-8139-4, pp. 128-129 |
Poster |
4 |
T. Ikari, K. Imai, S. Fukushima and M. Kondow Temperature variation of Non-radiative Electron Transition in GaInNAs/GaAs SQW Investigated by a photoluminescence and piezoelectric photothermal spectroscopy 2003 International Semiconductor Device Research Symposium, 10-12 December, 2003, Washington DC, USA, Proceedings; IEEE 03EX741, ISBN 0-7803-8139-4, pp. 226-226 |
Poster |
5 |
K. Sakai, et al. |
Oral |
6 |
A. Fukuyama, et al., International Conference on Defects in Semiconductor, June, 2003, Netherlands. |
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