Publications in 2012

Regular articles: 　
1

T. Mori, Y. Motono, W. Ding, A. Fukuyama, T. Yamaguchi, and T. Ikari,
Study of bandgap energies of Cu(In,Ga)Se2 thin films grown by a sequential evaporation method using piezoelectric photothermal spectroscopy,
Japanese Journal of Applied Physics, 51 (7), 07GA07 (2012). IF=1.067

  
2

A. Fukuyama, D. Ishibashi, Y. Sato, K. Sakai, H. Suzuki, K. Nishioka, and T. Ikari,
Investigation of the photovoltaic performance of the polycrystalline silicon p-n junction by a photothermal measurement,
Journal of Non-Crystalline Solids, 358 (17), 2206 (2012). IF=1.597

 
3

K. Kashima, A. Fukuyama, Y. Nakano, M. Inagaki, H. Suzuki, M. Yamaguchi, and T. Ikari,
Nitrogen related deep levels in GaAsN films investigated by a temperature dependence of piezoelectric photothermal signal,
Materials Science Forum, 725, 93 (2012).

  
4

K. Maeda, N. Kawaida, R. Tsudome, K. Sakai, and T. Ikari,
X-ray and photoluminescence properties of Sm3+ doped barium sulfide,
Physica Status Solidi (C), 9 (12), 2271 (2012).

  
5

A. Fukuyama, Y. Nakano, T. Aihara, H. Fujii, M. Sugiyama, Y. Nakano, and T. Ikari,
Non-radiative carrier recombination mechanism in the InGaAs/GaAsP strain-balanced quantum well solar cells with different number of stacks by using a piezoelectric photothermal method,
AIP Conference Proceedings, 1477, 185 (2012).

 　

Int. Conf. Presentation and Proceedings:

　

1

T. Aihara, Y. Nakanoa, A. Fukuyamaa, Y. Wang, M. Sugiyamab, Y. Nakanob, and T. Ikari, “Non-radiative carrier recombination in InGaAs/GaAsP strain-balanced superlattice solar cell”, American Vacuum Society 59th Int. Symposium, ENTF-TuA-11, Oct. 29-Nov. 02, Tampa, FL, USA (2012). Oral.

  
2

T. Ikari, T. Aihara, Y. Nakano, Y. Wang, M. Sugiyama, Y. Nakano, and A. Fukuyama, “Piezoelectric photothermal spectra and carrier nonradiative recombination in InGaAs/GaAsP superlattice structured solar cells”, American Vacuum Society 59th Int. Symposium, ENTF-TuA-12, Oct. 29-Nov. 02, Tampa, FL, USA (2012). Oral

  
3

A.Suzuki, A. Fukuyama, M. Yamaguchi, and T. Ikari, “The effect of substrate on the GaN on Si substrate by photoreflectance and photoluminescence”, Int. Workshop on Nitride Semiconductors (IWN2012), 20121019, Sapporo, Japan (2012).

  
4

W. Ding, A. Suzuki, A. Fukuyama, J. Nishinaga, Y. Horikoshi, and T. Ikari, “Photoluminescence and photoreflectance spectra of C60 and Si co-doped GaAs layers”, Int. Conf. on Diamond and Carbon Materials, 20120906, Granada, Spain (2012).

  

5

A. Suzuki, A. Fukuyama, J-H. Paek, M. Yamaguchi, and T. Ikari, “Effect of Be doping on the optical properties of catalyst free MBE-VLS grown GaAs nanowires on Si (111) substrate”, Int. Conf. on Superlattices, Nanostructures, and Nanodevices, July 2227, Dresden, Germany (2012).

  
6

T. Ikari, A. Fukuyama, K. Nishioka, J. P. Roger and D. Fournier, “Effect of grain boundaries on the thermal and electron diffusivity of multi-crystalline silicon investigated by a photothermal microscopy”, The European Materials Research Society Spring Meeting, May 14-18, A10-27, Strasbourg, France (2012). Oral.

  
7

W. Ding, Y. Motono, T. Mori, A. Suzuki, T. Yamaguchi, A. Fukuyama, and T. Ikari, “Bandgap gradient of Cu(In,Ga)Se2 absorbing layer studied by piezoelectric photothermal and photoluminescence spectroscopies”, The European Materials Research Society Spring Meeting, May 14-18, B06-5, Strasbourg, France (2012).

  
8

A. Fukuyama, S. Yamamoto, A. Suzuki, M. Inagaki, H. Suzuki, M. Yamaguchi, and T. Ikari, “Effect of N composition on temperature dependence of band gap energies of GaAsN thin films grown by Chemical Beam Epitaxy”, The European Materials Research Society Spring Meeting, May 14-18, T22, Strasbourg, France (2012). Oral.

  
9

T. Aihara, Y. Nakano, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano, and T. Ikari, “Non-radiative carrier recombination in InGaAs/GaAsP strain-balanced superlattice solar cell", 8th International Conf. on Concentrating Photovoltaic Systems (CPV-8), April 16-18, Toledo, Spain, (2012).

  
     
     
     

 

 

　

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