Publications in 2013

Regular articles: 　
1

H. Suzuki, A. Fukuyama, and T. Ikari,
Acceptor levels due to a complex including the nitrogen-hydrogen bond in GaAsN films grown by chemical beam epitaxy,
Japanese Journal of Applied Physics, 52 (5), 051001 (2013)

DOI: 10.7567/JJAP.52.051001
  
2

H. Suzuki, H. Sadato, T. Haraguchi, T. Yamauchi, M. Ozeki, and T. Ikari,
Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy,
Thin Solid Films, 540, 79 (2013).

DOI: 10.1016/j.tsf.2013.06.018

  
3

H. Suzuki, D. Ito, A. Fukuyama, and T. Ikari,
Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate,
Journal of Crystal Growth, 380, 148 (2013).

DOI: 10.1016/j.jcrysgro.2013.06.015
  
4

H. Suzuki, A. Suzuki, A. Fukuyama, and T. Ikari,
Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy,
Journal of Crystal Growth, 384, 5 (2013).

DOI: 10.1016/j.jcrysgro.2013.08.034
 		 


　

Int. Conf. Presentation and Proceedings:

　

1

T. Ikari, A. Fukuyama, T. Aihara, M. Kojima, M. Sugiyama, and Y. Nakano, “ Non-radiative carrier recombination rate in multiple quantum well solar cells determined by using a photothermal and a surface photovoltage spectroscopies”, EU-PVSEC (European Photovoltaic conference) , Sep. 30-Oct. 4, 1AV.2.23, Paris, France (2013).

  
2

A.Fukuyama, T. Ikari, H. Hisamatsu and S. Yamaguchi, T. Yamaguchi, “Bandgap Gradient of Cu(In,Ga)Se2 Solar Cell Investigated by a Photothermal and a Photoluminescence Spectroscopies”,  EU-PVSEC (European Photovoltaic conference), Sep. 30-Oct. 3, BV.5.66, Paris, France (2013)

  
3

D. Ohori, K. Ishikura1, Y. Murayama, K. Sakai, D. Nakamura, T. Okada, M. S. R. Rao, A. Fukuyama, and T. Ikari, “Internal diffusion of Lithium atoms in Li, Ni-codoped ZnO films synthesized by a pulsed laser deposition”, EMRS (European Materials Research Society Symposium), May. 27-31, H-VI-1 Strasbourg, France (2013). Oral.

  
4

Y. Yokoyama, M. Kojima, T. Aihara, H. Suzuki, A. Fukuyama, H. Fujii, M. Sugiyama, Y. Nakano, and T. Ikari, “Exciton lifetime and Stark Ladder Transition in InGaAs/GaAsP Strain-Balanced Superlattice Solar Cells”, EMRS (European Materials Research Society Symposium), May. 27-31, J-XV-6, Strasbourg, France (2013). Oral.

  

5

T. Aihara, M. Kojima, Y. Yokoyama, H. Suzuki, A. Fukuyama, Y. Wang, 4 M. Sugiyama, Y.Nakano and T. Ikari, “Effect of internal electric field on Non-Radiative Carrier Recombination in the Strain-Balanced InGaAs/GaAsP Multiple Quantum Well Solar Cells”, EMRS (European Materials Research Society Symposium), May. 27-31, J-XIII-5, Strasbourg, France (2013). Oral.

  
6

A. Suzuki, A. Fukuyama, J-H. Paek, M. Yamaguchi, and T. Ikari, “Effect of Si-doping on the photoreflectance spectra of catalyst-free MBE-VLS grown GaAs nanowires on the (111)Si substrate”, EMRS (European Materials Research Society Symposium), May. 27-31, P-PII-6, Strasbourg, France (2013).

  
7

Y. Yokoyama, M. Kojima, T. Aihara, Y. Wang, A. Fukuyama, M. Sugiyama, Y. Nakano, and T. Ikari, "Estimation of miniband in InGaAs/GaAsP strain-balanced sperlattice solar cell by using piezoelectric photothermal technique", 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9), April 15-17, Miyazaki, Japan (2013).

  

8

G. Morioka, A. Suzuki, H. Suzuki, A. Fukuyama, M. Yamaguchi, and T. Ikari, "Study of the microstructure of nitrogen-related localized state in GaAsN", 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9), April 15-17, Miyazaki, Japan (2013).

  
9

D. Ito, H. Tachikake, H. Suzuki, A. Fukuyama, and T. Ikari, "Reduction of rotation twin in GaAs/Si (111) by irradiation of In to Si surface", 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9), April 15-17, Miyazaki, Japan (2013).

  
10

A. Haga, H. Sadato, T. Haraguchi, H. Suzuki, A. Fukuyama, M. Ozeki, and T. Ikari, "Effects of gas flow sequence on self-limiting mechanisms of GaAsN grown by atomic layer epitaxy", 9th International Conf. on Concentrating Photovoltaic Systems (CPV-9), April 15-17, Miyazaki, Japan (2013).

  

11

A. Suzuki, A. Fukuyama, Y. Honda, M. Yamaguchi, H. Amano, and T. Ikari, "Radiative and Non-radiative Carrier Recombination in the Semipolar (1-101)GaN on 8º off-axis (001)Si Substrate", The 40th International Symposium on Compound Semiconductors (iscs2013), May 19-23, Kobe, Japan (2013).

  
12

T. Aihara, Y. Yokoyama, M. Kojima, H. Suzuki, A. Fukuyama, Y. Wang, M. Sugiyama, Y. Nakano, and T. Ikari, "Estimation of Mini-band in Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells by Using a Piezoelectric Photothermal Method", The 39th IEEE Photovoltaic Specialists Conference (IEEE-PVSC39), June 16-21, USA (2013).

  
13

H. Suzuki, W. Ding, T. Yamaguchi, T. Haraguchi, S. Goto, Y. Yokoyama, K. Maeda, A. Fukuyama, and T. Ikari, "Effects of N precursor duration on opt-electrical properties of GaAsN films grown by atomic layer epitaxy", 23th Photovoltaic Science and Engineering Conference (PVSEC-23), Oct. 28 - Nov. 01, Taipei, Taiwan (2013).

  

 

 

　

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