Publications in 2016

Regular articles: 　
1

Yokoyama, Y. Fukuyama, A., Haraguchi, T., Yamauchi, T., Ikari, T., and Suzuki, H.
Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy
Japanese Journal of Applied Physics, Volume 55, Issue 1, January 2016, Article number 01AC06
DOI: 10.7567/JJAP.55.01AC06

 
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Tetsuji Kume, Fumitaka Ohashi, Kentaro Sakai, Atsuhiko Fukuyama, Motoharu Imai d, HaruhikoUdono,
Takayuki Ban, Hitoe Habuchi, Hidetoshi Suzuki, Tetsuo Ikari, Shigeo Sasaki, Shuichi Nonomura
Thin film of guest-free type-II silicon clathrate on Si(111) wafer
 JThin Solid Films 609 (2016) 30–34
DOI: 10.1016/j.tsf.2016.03.056

  
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Int. Conf. Presentation and Proceedings:

　

1

 Effect of embedding process on photoluminescence spectra of GaAs quantum nanodisks fabricated by bio-template and neutral beam etching process
D. Ohori, K. Kondo, K. Sakai, C. Thomas, A. Higo, S. Samukawa, T. Ikari, and A. Fukuyama
EMRS 2-16 Meeting, Lille, France, 2 to 6, May.		  
2

Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated by Using Photoreflectance and Photoluminescence Spectroscopies
Tsubasa Nakamura, Kouki Matsuochi, Takumi Murakami, Hidetoshi Suzuki, Tetsuo Ikari,
Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano and Atsuhiko Fukuyama
EMRS 2-16 Meeting, Lille, France, 2 to 6, May.

  
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