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Major publications before 1999

Book

1	T.Ikari, S.Shigetomi, Y.Koga Photoacoustic and thermal wave phenomena in semi-conductors. Part I and II. North-Holland, New York ed. by A. Mandelis, pp.397-440 (1987)
2	T. Ikari and A. Fukuyama Nonradiative investigation of impurity and defect levels in Si and GaAs by piezoelectric photoacoustic spectroscopy in “Progress in Photothermal andPhotoacoustic Science and Technology Vol.4" SPIE Optical Engineering Press, ed. A. Mandelis and P. Hess, Chap 5, pp.147-176 (2000)
3	T. Ikari and K. Yoshino Photothermal and photoacoustic investigation of CuInSe2 chalcopyrite semiconductor films, in”Ternary and Multinary Compounds in the 21st Century” PAP Books 1 』2001, ed. T. Matsumoto, et al.,, pp.262-267 (2001)

Journals

Physical Review

1	A. Fukuyama, Y. Akashi, K. Yoshino, K. Maeda and T. Ikari Piezoelectric photoacoustic studies of optical recovery of metastable states of EL2 in SI-GaAs Phys. Rev., B 58, pp.12868-12875 (1998)
2	T. Ikari, T. Tanaka, K. Ura, K. Maeda, K. Futagami, and S. Shigetomi Raman spectra of P-, Sb-, or Bi-doped GexSe1-x bulk glasses Phys. Rev. B 47, 4984 (1993)
3	T. Ikari, A. Fukuyama, K. Maeda, K. Futagami, S. Shigetomi, and Y. Akashi Photoacoustic signals of n-type GaAs layers grown by molecular-beam epitaxy on semi-insulating substrates Phys. Rev. B 46, 10173 (1992)
4	T. Ikari, S. Shigetomi, Y. Koga, H. Nishimura, H. Yayama, and A. Tomokiyo Low-temperature photoacoustic spectra of BiI3 single crystals Phys. Rev. B 37, 886 (1988)
5	T. Ikari, S. Jandl, M. Aubin, and K. D. Truong Electrical properties and phase transitions of trimethylammonium-iodine- tetracyanoquinodimethane (TMA-I-TCNQ) Phys. Rev. B 28, 3859 (1983)

Journal of Applied Physics

1	T. Ikari, A. Salnick and A. Mandelis Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors, J. Appl. Phys. 85, pp.7392-7397 (1999).
2	K. Yoshino, A. Fukuyama, H. Yokoyama, K. Maeda and T. Ikari Optical characterizations of CuInSe2 epitaxial layer grown by molecular beam epitaxy, J. App. Phys., 86, pp. 4354-4359 (1999).
3	A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda and T. Ikari Effect of the carbon acceptor concentration on the photo-quenching and following enhancement of the photoacoustic signals of semi-insulating GaAs J. Appl. Phys., 81, pp.7567-7574 (1997)
4	S. Shigetomi, T. Ikari and H. Nakashima Electrical properties of layer semiconductor p-GaSe doped with Cu J. Appl. Phys., 80, 4779-81 (1996)
5	S. Shigetomi, T. Ikari, and H. Nakashima Impurity levels in layer semiconductor p-GaSe doped with Mn J. Appl. Phys. 76, 310 (1994)
6	S. Shigetomi, T. Ikari, and H. Nakashima Optical and electrical properties of layer semiconductor p-GaSe doped with Zn J. Appl. Phys. 74, 4125 (1993)
7	S. Shigetomi, T. Ikari, and H. Nakashima Electrical characteristics of layer semiconductor p-GaSe doped with Cd J. Appl. Phys. 73, 4686 (1993)
8	T. Ikari, K. Miyazaki, A. Fukuyama, H. Yokoyama, K. Maeda, and K. Futagami Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals J. Appl. Phys. 71, 2408 (1992)
9	S. Shigetomi, T. Ikari, and H. Nishimura Photoluminescence spectra of p-GaSe doped with Cd J. Appl. Phys. 69, 7936 (1991)
10	S. Shigetomi, H. Ohkubo, T. Ikari, and H. Nakashima Zn-induced impurity levels in layer semiconductor InSe J. Appl. Phys. 66, 3647 (1989)

Japanese Journal of Applied Physics

1	K. Yoshino, M. Iwamoto, H. Yokoyama, A. Fukuyama, K. Maeda and T. Ikari Piezoelectric photoacoustic and photoluminescence properties of CuInxGa1-xSe2 alloys, Jpn. J. Appl. Phys. 38, pp.3171-3174 (1999).
2	S. Shigetomi, T. Ikari and H. Nakashima Radiative centers in layer semiconductor p-GaSe doped with Mn Jpn. J. Appl. Phys., 38, 3506-3507 (1999)
3	A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda and T. Ikari Nonradiative investigation of hole photo-ionization spectrum of EL2 in carbon concentration controlled semi-insulating GaAs Jpn. J. Appl. Phys., 36, pp.L650-653 (1997)
4	S. Shigetomi, T. Ikari and H. Nakashima Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn Jpn. J. Appl. Phys., 35, 4291-2 (1996)
5	T. Ikari, K. Maeda, K. Futagami, A. Nakashima Electrical properties of layered ZrSe2 single crystals annealed in selenium atmosphere Jpn. J. Appl. Phys., 34, 1442-6 (1995)
6	H. Matsuyama, T. Ikari, H. Yokoyama and K. Futagami Photoacoustic spectra of Si wafers at liquid helium temperature Jpn. J. Appl. Phys., 34, 2904-6 (1995)

Others (Except the Conference Proceedings....)

1	T. Yoshino, Y. Nakagawa, A. Fukuyama, K. Maeda, M. Yoneta and T. Ikari Deep levels in ZnSe epitaxial layers examined by piezoelectric photoacoustic spectroscopy J. Cryst. Growth, Vol.184-185, pp.1151-1154 (1999)
2	T. Ikari, K. Maeda, H. Yokoyama, A. Fukuyama and K. Yoshino Shallow donor levels of Li-doped ZnSe single crystals Microelectronic Engineering, Vol.43-44, pp.683-688 (1998)
3	K. Yoshino, A. Fukuyama, K. Maeda, P.J. Fons, A. Yamada, S. Niki and T. Ikari, Temperature dependence of photoacoustic spectra in CuInSe2 thin films grown by molecular beamepitaxy Sol. Energy Mater. Sol. Cells, Vol.50, pp.127-132
4	S. Shigetomi, T. Ikari, and H. Nishimura Temperature dependence of photoluminescence of layer semiconductor p-GaTe J. Luminescence Vol.78, pp.117-20 (1998)
5	T. Ikari, S. Shigetomi, Y. Koga, and S. Shigetomi Low-temperature photoacoustic measurements by a transducer technique Rev. Sci. Instrum. 57, 17 (1986)
6	T. Ikari, H. Berger and F. Levy Electrical properties of vapour grown tellurium single crystals Materials Research Bulletin, Volume 21, January 1986,? 99-105
7	T. Ikari, R. Provencher, S. Jandl and M. Aubin Electrical properties of vapour grown ZrSe₃ single crystals Solid State Communications, Volume 45, January 1983, 113-116

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