Quantum Well structure of GaInNAs Thin Films
Recently developed compound semiconductor GaInNAs is a promising material for optical fiber communication. The absorption spectrum of thin GaInNAs layer (10-nm thickness) was observed by using our developed piezoelectric photothermal spectroscopy (PPTS). Although the effcet of a surface photo-induced voltage could not be well separated, the spectra revealed step-like density of states and exciton formation in two-dimensional discrete levels in the quantum well. Effective mass of the conduction band was estimated to be 0.05m0 by assuming that the valence band offset was negligible. Rapid thermal annealing relaxes a lattice defects and distortions and this results in a blue shift of the spectrum.
(APL 2003)
(APL, JJAP, EMRS2004, ISDRS2003, CPAC, etc.)