(68) GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth, J. Fan, R. Xu, M. ARAI, Y. Miyamoto, Japanese Journal of Applied Physics, accepted for publication, 2024.

(67) Metalorganic Vapor-Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrates, Koki Hombu, Kenshiro Hikita, Takeshi Fujisawa, Koji Maeda, and Masakazu Arai, Pyhsica Status Solidi (A), accepted for publication, 2024.

(66) Surface Morphology Improvement by Diethylzinc Doping on Metamorphic InAs on GaAs Using MOVPE, M. Arai, S. Nakagawa, K. Hombu, Y. Hirata, K. Maeda, Journal of Crystal Growth, Vol. 617, 127274, 2023.

(65) 分光反射率から算出した植生指数によるローズグラスの粗タンパク質含量推定の検討, 荒井昌和, 中村渓士郎・石垣元気, 草地学会論文誌、69(1), 23-26, 2023.

(64) Electrode shape dependence of InGaAsP photovoltaic characteristics under laser irradiation for optical wireless and fiber power transmission, M. Arai, A. Kushiyama, Y. Motomura, K. Nishioka, The review of laser engineering, 51(3), 171-175, 2023.

(63) LiDAR とドローンを用いた牧草の収量推定,荒井 昌和 ,庄 中原 ,中村 渓士郎 ,石垣 元気 ,小川 将克,レーザー研究,第49巻10号,2021.

(62) Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing, T. Fujisawa, M. Arai, and K. Saitoh, Optics Express, Vol. 27, Issue 3, p.2457, 2019.

(61) GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device, M. Arai, K. Takahashi, Y. Yamagata, Y. Inoue, R. Wakaki, and K. Maeda, Japanese Journal of Applied Physics, Vol. 57, 08PD05, 2018.

(60) Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers, R. Nakao, M. Arai, T. Kakitsuka and S. Matsuo, IEICE TRANSACTIONS on Electronics, E101.C(7), 537-544, 2018.

(59) GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator with Taper Coupler for Mid-Infrared Ge-on-Si platform, M. Akie, T. Fujisawa, T. Sato, M Arai and K. Saitoh, IEEE Selected Topics on Quantum Electronics., Vol. 24, 3400208, 2018.

(58) 中赤外発光受光素子用III-V(Sb)系材料の結晶成長と評価, 荒井昌和,高橋翔,井上祐貴,藤原由生,吉元圭太,山形勇也,西岡賢祐,前田幸治,レーザー研究,第45巻12号,2017年.

(57) 1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement, R. Nakao, M. Arai, W. Kobayashi, T. Yamamoto and S. Matsuo, IEEE Journal of Selected Topics in Quantum Electronics, 21(6), 1501407, (2015.5)

(56) Novel approach for chirp and output power compensation applied to a 40-Gbit/s EADFB laser integrated with a short SOA, W. Kobayashi, M. Arai, T. Fujisawa, T. Sato, T. Ito, K. Hasebe, S. Kanazawa, Y. Ueda, T. Yamanaka and H. Sanjoh, Optics Express, 23(7), 9533-9542, (2015.4)

(55) Planar n-SI-n heterostructure athermal InP (110) optical modulator, Y. Ogiso, Y. Nakanishi, S. Kanazawa, E. Yamada, H. Tanobe, H. M. Arai, Y. Shibata and M. Kohtoku, Optics Express, 22(21), 25776-25781, (2014.10)

(54) Static properties of planar Mach-Zehnder optical modulator on (110) InP substrate, Y. Ogiso, M. Arai, T. Sato, Y. Shibata and M. Kohtoku, Electronics Letters, 49(14), 898-900, (2013.7)

(53) 1.3-μm range metamorphic InGaAs laser with high characteristic temperature for low power consumption operation, M. Arai, W. Kobayashi and M. Kohtoku, IEEE Journal of Selected Topics in Quantum Electronics, 19(4), 1502207, (2013.7)

(52) Theoretical and experimental investigation of the incident-power-dependent extinction ratio of an electroabsorption modulator integrated with a distributed feedback laser, T. Fujisawa, T. Yamanaka, T. Tadokoro, N. Fujiwara, M. Arai, W.Kobayashi,Y.Kawaguchi,K. Tsuzuki and F. Kano, IEEE Journal of Quantum Electronics, 47(1), 60-65, (2011.1)

(51) Full C-band 10-Gb/s 40-km SMF transmission of InGaAlAs electroabsorption modulator, W. Kobayashi, N. Fujiwara, T. Yamanaka, T. Tadokoro, T. Fujisawa ,Y. Shibata,M. Ishikawa,M. Arai , K. Tsuzuki and F. Kano, IEEE Journal of Lightwave Technology, 28(20), 3012-3018, (2010.10)

(50) Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates, T. Fujisawa, M. Arai and F. Kano, Journal of Applied Physics, 107(9), 93107-93107-7, (2010.5)

(49) Design and fabrication of 10-/40-Gb/s, uncooled electroabsorption modulator integrated DFB laser with butt-joint structure, W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, T. Tadokoro,K. Tsuzuki,Y. Kondo amd F. Kano, IEEE Journal of Lightwave Technology, 28(1), 164-171, (2010.1)

(48) 10-Gb/s direct modulation up to 100°C using 1.3-μm-range metamorphically grown strain compensated InGaAs-GaAs MQW laser on GaAs substrate, M. Arai, T. Tadokoro, T. Fujisawa, W. Kobayashi, K. Nakashima,M. Yuda and Y. Kondo, IEEE Photonics Technology Letters, 21(18), 1344-1346, (2009.10)

(47) Wide temperature range operation of a 1.55-μm 40-Gb/s electroabsorption modulator integrated DFB laser for very short-reach applications, W. Kobayashi, T. Yamanaka, M. Arai, N. Fujiwara, T. Fujisawa, K. Tsuzuki, T. Ito, T. Tadokoro and F. kano, IEEE Photonics Technology Letters, 21(18), 1317-1319, (2009.9)

(46) Wide Temperature Range (-25 °C-100 °C) Operation of a 10-Gb/s 1.55-μm Electroabsorption Modulator Integrated DFB Laser for 80-km SMF Transmission, W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa , M. Ishikawa, K. Tsuzuki, Y. Shibata, Y.Kondo and F. Kano, IEEE Photonics Technology Letters, 21(15), 1054-1056, (2009.8)

(45) 25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km)100 Gbit/s ethernet system, T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro , K . Tsuzuki, Y. Akage, R. Iga, T. Yamanaka and F. Kano, Electronics Letters, 45(17), 900-902, (2009.8)

(44) High-temperature operation of 1.26-μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate, M. Arai, K. Nakashima, T. Fujisawa, T. Tadokoro, W. Kobayashi , M. Yuda and Y. Kondo, IEEE Journal of Selected Topics in Quantum Electronics, 15(3), 724-730, (2009.5)

(43) Uncooled (25-85 °C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate, M. Arai, T. Tadokoro, T. Fujisawa, W. Kobayashi, K. Nakashima, M. Yuda and Y. Kondo , Electronics Letters, 45(7), 359-360, (2009.3)

(42) 10-Gbps Direct Modulation Using a 1.31-mu m Ridge Waveguide Laser on an InGaAs Ternary Substrate, M. Arai, W. Kobayashi, T. Fujisawa, M. Yuda, T. Tadokoro, K. Kinoshita , S. Yoda and Y. Kondo , Applied Physics Express, 2(2), 022101, (2009.2)

(41) Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations, T. Fujisawa, M. Arai, T. Yamanaka, Y. Kondo and F. Kano, Journal of Applied Physics, 105(11), 113114 - 113114-8, (2009.1)

(40) High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate, M. Arai, T. Fujisawa, W. Kobayashi, K. Nakashima, M. Yuda and Y. Kondo , Electronics Letters, 44(23), 1359-1360, (2008.11)

(39) 10-Gb/s 100-km SMF Transmission Using InP Mach-Zehnder Modulator Monolithically Integrated With Semiconductor Optical Amplifier, T. Yasui, Y. Shibata, K. Tsuzuki, N. Kikuchi, M. Ishikawa ,Y. kawaguchi ,M. Arai and H.Yasaka ,IEEE Photonics Technology Letters, 20(13), 1178-1180, (2008.7)

(38) Enhanced temperature characteristics of InGaAs/InAlGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates, T. Fujisawa, M. Arai, T. Kakitsuka, T. Yamanaka, Y. Kondo and H. Yasaka , Applied Physics Express, 1(4), 041203-041205, (2008.4)

(37) High-characteristic-temperature 1.3-μm-band laser on an InGaAs ternary substrate grown by the traveling liquidus-zone method, M. Arai, T. Watanabe, M. Yuda, K. Kinoshita, S. Yoda and Y. Kondo, IEEE Journal of Selected Topics in Quantum Electronics, 13(5), 1295-1301, (2007.9)

(36) Noise characteristics of GaInNAsSb 1300-nm-range VCSEL with optical feedback for isolator-free module, M. Ariga, M. Arai, T. Kageyama, C. Setiagung, Y. Ikenaga ,N. Iwai,H. Shimizu,K. Nishikata, A. Kasukawa and F. Koyama,IEEE Journal of Selected Topics in Quantum Electronics, 11(5), 1074-1078, (2005.9)

(35) A thermally tunable GaAlAs-GaAs micromachined optical filter with submillisecond tuning speed T. Amano, T. Hino, F. Koyama, M. Arai and A. Matsutani, IEEE Photonics Technology Letters, 16(6), 1501-1503, (2004.6)

(34) Size reduction of tunable micromachined filters for fast wavelength tuning, T. Amano, T. Hino, W. Janto, M. Arai and F. Koyama, Japanese Journal of Applied Physics, 43(2A), L157-L159, (2004.2)

(33) Isolator-free 10 Gbit/s singlemode fibre data transmission using 1.1 μm GaInAs/GaAs vertical cavity surface emitting laser, T. Kondo, M. Arai, A. Matsutani, T. Miyamoto, F. Koyama, Electronics Letters, 40(1), 65-66, (2004.1)

(32) Micromachined GaAs/AlGaAs resonant-cavity light emitter with small temperature dependence of emission wavelength, T. Amano, F. Koyama, M. Arai and A. Matsutani, Japanese Journal of Applied Physics, 42(11B), L1377-L1379, (2003. 11)

(31) Multiple-wavelength GaInAs/GaAs surface emitting laser array with wide wavelength span, M. Arai, T. Kondo, A. Onomura, A. Matsutani, T. Miyamoto and F. Koyama, IEEE Journal of Selected Topics on Quantum Electronics, 9(5), 1367-1373, (2003.9)

(30) Design and fabrication of double-cavity tunable filter using micromachined structure, W. Janto, T. Amano, F. Koyama, A. Matsutani, T. Kondo and M. Arai， Japanese Journal of Applied Physics, 42(7B), L828-L830, (2003.7)

(29) Densely integrated multiple-wavelength vertical-cavity surface-emitting laser array, A. Onomura, M. Arai, T. Kondo, A. Matsutani, T. Miyamoto and F. Koyama, Japanese Journal of Applied Physics, 42(5B), L529-L531, (2003.3)

(28) Design and fabrication of GaAs-GaAlAs micromachined tunable filter with thermal strain control, T. Amano, F. Koyama, T. Hino, M. Arai, A. Mastutani, IEEE Journal of Lightwave Technology, 21(3), 596-601, (2003.3)

(27) Single-mode fiber transmission using 1.2-μm band GaInAs/GaAs surface emitting laser, T. Kondo, M. Arai, M. Azuchi, I. Uchida, A. Matsutani , I. Miyamoto and F. Koyama , Electronics Letters, 38(16), 901-902, (2002.8)

(26) GaAlAs/GaAs micromachined thermally tunable vertical cavity filter with low tuning voltage, T. Amano, F. Koyama, and M. Arai, Electronics Letters, 38(14), 738-740, (2002.7)

(25) Growth of highly strained GaInAs/GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical cavity surface emitting laser array, M. Arai, T. Kondo, A. Matsutani, T. Miyamoto and F. Koyama IEEE Journal of Selected Topics in Quantum Electronics, 8(4), 811-816, (2002.7)

(24) Effect of annealing on highly strained GaInAs/GaAs quantum wells, T. Kondo, M. Arai, M. Azuchi, U. Uchida, T. Miyamoto and F. Koyama, Japanese Journal of Applied Physics, 41(6A), L612-L614, (2002.6)

(23) Low threshold current density operation of 1.16 μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate, T. Kondo, M. Arai, M. Azuchi, T. Uchida,A . Matsutani ,T. Miyamoto and F. Koyama, Japanese Journal of Applied Physics, 41(5B), L562-L564, (2002.5)

(22) Single high-order transverse mode surface emitting laser with micromachined surface relief, S. Shinada, F. Koyama, N. Nishiyama, and M. Arai, IEICE Transactions on Electronics, E85-C(4), 995-1000, (2002.4)

(21) Optical near field by vertical cavity surface emitting laser, S. Shinada, F. Koyama, N. Nishiyama, M. Arai, A. Matsutani, K. Goto and K. Iga , Electronics and Communications in Japan (Part II: Electronics), 85(2), 43-53, (2002.2)

(20) 1.4 μm GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy, Y. Ikenaga, T. Miyamoto, S. Makino, T. Kageyama, M. Arai , F. Koyama and K. Iga , Japanese Journal of Applied Physics, 41(2A), L664-665, (2002.2)

(19) Composition dependence of thermal annealing effect on 1.3 μm range GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy, S. Makino, T. Miyamoto, T. Kageyama, Y. Ikenaga, M. Arai,　F. Koyama and K. Iga, Japanese Journal of Applied Physics, 40(11B), L1211-L1213, (2001.11)

(18) Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, M. Arai, N. Nishiyama, M. Azuchi, A. Matsutani, F. Koyama and K. Iga, Japanese Journal of Applied Physics, 40(6A), 4056-4057, (2001.6)

(17) 1.12 um polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition, N. Nishiyama, M. Arai, S. Shinada, M. Azuchi, A. Matsutani ,T. Miyamoto, F. Koyama and K. Iga, Japanese Journal of Applied Physics, 40(5A), L437-L439, (2001.5)

(16) GaInAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs (311)B, M. Arai, N. Nishiyama, M. Azuchi, S. Shinada, A. Matsutani ,F. Koyama and K. Iga , IEICE Transactions on Electronics, E84-C(3), 331-338, (2001.3)

(15) Highly strained GaInAs/GaAs quantum well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation, N. Nishiyama, M. Arai, S. Shinada, M. Azuchi, T. Miyamoto , F. Koyama and K. Iga, IEEE Journal of Selected Topics in Quantum Electronics, 7(2), 242-248, (2001.3)

(14) Analysis and fabrication of micro-aperture GaAs/GaAlAs surface emitting laser for near field optical data storage, S. Shinada, F. Koyama, N. Nishiyama, M. Arai, and K. Iga, IEEE Journal of Selected Topics in Quantum Electronics, 7(2), 365-370, (2001.3)

(13) 1.15 mum lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristics temperature (T0=210)K, N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama and K. Iga, Japanese Journal of Applied Physics, 39(10B), L1046-1047, (2001.3)

(12) Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD, N. Nishiyama, M Arai, S. Shinada, T. Miyamoto, F. Koyama and K. Iga, Journal of Crystal Growth, 221(1-4), 530-534, (2000.12)

(11) Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition, S. Sato, N. Nishiyama, T. Miyamoto, T. Takahashi, N. Jikutani , M. Arai , A. Matsutani , F. Koyama and K. Iga , Electronics Letters, 36(24), 2018-2019, (2000.11)

(10) Optical near field by vertical surface emitting laser, S. Shinada, F. Koyama, N. Nishiyama, M. Arai, A. Matsutani, K. Goto and K. Iga, IEICE Transactions on Electronics, J83-C(9), 826-834, (2000.9)

(9) Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation, M. Arai, N. Nishiyama, S. Shinada, A. Matsutani, F. Koyama and K. Iga, Japanese Journal of Applied Physics, 39(8B), L588-L 590, (2000.8)

(8) Vertical-cavity surface-emitting laser array on GaAs (311)B substrate exhibiting single-transverse mode and stable-polarization operation, M. Arai, N. Nishiyama, S. Shinada, A. Matsutani, F. Koyama and K. Iga, Japanese Journal of Applied Physics, 39(6B), L858-L860, (2000.6)

(7) Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers, N. Nishiyama , M. Arai, S. Shinada, K. Suzuki, F. Koyama and K. Iga, IEEE Photonics Technology Letters, 12(6), 606-608, (2000.6)

(6) AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers, M. Arai, N. Nishiyama, S. Shinada, F. Koyama, and K. Iga, Japanese Journal of Applied Physics, 39(6A), 3468-3469, (2000.5)

(5) Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters, F. Koyama, T. Amano, N. Furukawa, N. Nishiyama, M. Arai and K. Iga, Japanese Journal of Applied Physics, 39(3B), 1542-1545, (2000.3)

(4) Fabrication of micro-aperture surface emitting laser for near field optical data storage, S. Shinada, F. Koyama, N. Nishiyama, M. Arai, K. Goto and K. Iga, Japanese Journal of Applied Physics, 38(11B), L1327-L1329, (1999.11)

(3) Polarization characteristics of surface emitting laser grown on (311)B substrates under high speed modulation, N. Nishiyama, A. Mizutani, N. Hatori, S. Shinada, M. Arai , F. Koyama and K. Iga,IEICE Transactions on Electronics, J82-C-I (7), 421-427, (1999.7)

(2) Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate, N. Nishiyama, A. Mizutani, N. Hatori, M. Arai, F. Koyama and K. Iga, IEEE Journal of Selected Topics in Quantum Electronics, 5(3), 530-536, (1999.5)

(1) Single-transverse mode and stable polarization operation of InGaAs/GaAs vertical-cavity surface emitting laser grown on GaAs (311) B under high-speed modulation, N. Nishiyama, A. Mizutani, N. Hatori, M. Arai, F. Koyama and K. Iga, IEEE Photonics Technology Letters, 10(12), 1676-1678, (1998.12)